JPH0138381B2 - - Google Patents
Info
- Publication number
- JPH0138381B2 JPH0138381B2 JP57195921A JP19592182A JPH0138381B2 JP H0138381 B2 JPH0138381 B2 JP H0138381B2 JP 57195921 A JP57195921 A JP 57195921A JP 19592182 A JP19592182 A JP 19592182A JP H0138381 B2 JPH0138381 B2 JP H0138381B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- electrode
- cathode
- emitter layer
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/291—Gate electrodes for thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
Landscapes
- Thyristors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57195921A JPS5986260A (ja) | 1982-11-10 | 1982-11-10 | ゲ−トタ−ンオフサイリスタ |
EP83111184A EP0111166B1 (en) | 1982-11-10 | 1983-11-09 | Gate turn-off thyristor |
CA000440851A CA1201215A (en) | 1982-11-10 | 1983-11-09 | Gate turn-off thyristor |
DE8383111184T DE3370899D1 (en) | 1982-11-10 | 1983-11-09 | Gate turn-off thyristor |
US06/550,586 US4626888A (en) | 1982-11-10 | 1983-11-10 | Gate turn-off thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57195921A JPS5986260A (ja) | 1982-11-10 | 1982-11-10 | ゲ−トタ−ンオフサイリスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5986260A JPS5986260A (ja) | 1984-05-18 |
JPH0138381B2 true JPH0138381B2 (en]) | 1989-08-14 |
Family
ID=16349193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57195921A Granted JPS5986260A (ja) | 1982-11-10 | 1982-11-10 | ゲ−トタ−ンオフサイリスタ |
Country Status (5)
Country | Link |
---|---|
US (1) | US4626888A (en]) |
EP (1) | EP0111166B1 (en]) |
JP (1) | JPS5986260A (en]) |
CA (1) | CA1201215A (en]) |
DE (1) | DE3370899D1 (en]) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0691246B2 (ja) * | 1985-09-02 | 1994-11-14 | 株式会社日立製作所 | 半導体装置 |
CH670334A5 (en]) * | 1986-09-16 | 1989-05-31 | Bbc Brown Boveri & Cie | |
EP0328778B1 (de) * | 1988-01-26 | 1992-03-11 | Asea Brown Boveri Ag | Hochleistungsschalter |
JP2739970B2 (ja) * | 1988-10-19 | 1998-04-15 | 株式会社東芝 | 圧接型半導体装置 |
EP0380799B1 (de) * | 1989-02-02 | 1993-10-06 | Asea Brown Boveri Ag | Druckkontaktiertes Halbleiterbauelement |
JPH0325258U (en]) * | 1989-07-24 | 1991-03-15 | ||
JP2597412B2 (ja) * | 1990-03-20 | 1997-04-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
DE4227063A1 (de) * | 1992-08-15 | 1994-02-17 | Abb Research Ltd | Abschaltbares Hochleistungs-Halbleiterbauelement |
DE4234829C2 (de) * | 1992-10-15 | 1996-01-18 | Siemens Ag | GTO-Thyristor |
JP3319227B2 (ja) * | 1995-06-29 | 2002-08-26 | 三菱電機株式会社 | 電力用圧接型半導体装置 |
WO2001001495A1 (en) * | 1999-06-29 | 2001-01-04 | Mitsubishi Denki Kabushiki Kaisha | Power-switching semiconductor device |
US6669783B2 (en) * | 2001-06-28 | 2003-12-30 | Lam Research Corporation | High temperature electrostatic chuck |
JP4802499B2 (ja) * | 2005-01-07 | 2011-10-26 | トヨタ自動車株式会社 | パワー制御回路および車両 |
CN102947939B (zh) * | 2010-06-21 | 2015-11-25 | Abb技术有限公司 | 具有局部发射极短路点的改进模式的相位控制晶闸管 |
US8687174B2 (en) * | 2010-08-11 | 2014-04-01 | Samsung Electronics Co., Ltd. | Unit pixel, photo-detection device and method of measuring a distance using the same |
CN114220845B (zh) * | 2021-12-15 | 2025-04-18 | 株洲中车时代半导体有限公司 | 功率半导体器件 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1564185B2 (de) * | 1966-09-22 | 1972-11-23 | International Rectifier Corp., El Segundo, Calif. (V.St A.) | Schaltungsanordnung fuer einen steuerbaren halbleitergleichrichter sowie steuerbare halbleitergleichrichter hierzu |
DE2064110A1 (de) * | 1970-01-02 | 1971-07-08 | Westinghouse Electric Corp | Mittels einer Gate-Elektrode steuerbare Schalteinrichtung |
JPS507427A (en]) * | 1973-05-18 | 1975-01-25 | ||
JPS54136186A (en) * | 1978-04-14 | 1979-10-23 | Hitachi Ltd | Semiconductor device |
JPS56130969A (en) * | 1980-03-18 | 1981-10-14 | Hitachi Ltd | Semiconductor device |
JPS56131955A (en) * | 1980-09-01 | 1981-10-15 | Hitachi Ltd | Semiconductor device |
JPS5762562A (en) * | 1980-10-03 | 1982-04-15 | Hitachi Ltd | Semiconductor device |
JPS57201077A (en) * | 1981-06-05 | 1982-12-09 | Hitachi Ltd | Semiconductor switching device |
-
1982
- 1982-11-10 JP JP57195921A patent/JPS5986260A/ja active Granted
-
1983
- 1983-11-09 EP EP83111184A patent/EP0111166B1/en not_active Expired
- 1983-11-09 DE DE8383111184T patent/DE3370899D1/de not_active Expired
- 1983-11-09 CA CA000440851A patent/CA1201215A/en not_active Expired
- 1983-11-10 US US06/550,586 patent/US4626888A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0111166B1 (en) | 1987-04-08 |
US4626888A (en) | 1986-12-02 |
EP0111166A1 (en) | 1984-06-20 |
JPS5986260A (ja) | 1984-05-18 |
DE3370899D1 (en) | 1987-05-14 |
CA1201215A (en) | 1986-02-25 |
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